Manipulation of the spin memory of electrons in n-GaAs.
نویسندگان
چکیده
We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of an n-GaAs layer.
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عنوان ژورنال:
- Physical review letters
دوره 88 25 Pt 1 شماره
صفحات -
تاریخ انتشار 2002